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| ! " #$ % $ ! ! & ! '() ! * ! % ! $ ! # ("++, * " ! -,! # ! ! * ("++, $ ! # ! " # $ % &'( ) $* + , ( & - . , & / (0. &1 23 / (0 . 4# / / (0. &1 23 /* 5 4( /1 /* * 6# &3 ( 7! , &2# 4 & , &2# 8 ( )9228 2(: ; & <) ;)" =8> 9?>2: 4 3 ( @@@ ) 4 , 5' + ,8( @@@ *$ 4 3 ( 2= @@@ .)) .)/ 0 ? . to-220ab ** !" # $# s d g www.kersemi.com , ( ;6,'.12= 9a 1 : @@@ @@@ 0 " & 0 , ( & / 9a 1 : @@@ @@@ # b ( ' " & @@@ @@@ 4/4( /1 2 @@@ c 4/4( /1 0& @@@ ) * *d ' " 6 2 ( 2 & & = 9 2 =1% 7% : , (a5 " & @@@ @@@ d ? ? a5 " &2# 88 ( @@@ @@@ * 48 ( 2 4 , ( , (6 4 ( @@@ @@@ ? + 00 & @@@ d & ' " ( ( ( @@@ @@@ , @@@ @@@ d @@@ @@@ + , (' " %5& @@@ @@@ + , (4/%5& @@@ @@@ c + 0& @@@ @@@ ! c + , ( 0& @@@ @@@ c + 9e; e: 0& @@@ @@@ ,' & ) 6 1 2 @@@ @@@ 4 2 @@@ ! @@@ 688 1 2 @@@ @@@ 4 ? ' 2 @@@ ) @@@ 4 ?, ,' & a " @@@ @@@ 229 : 8 2#(5& ( 8 ( ( # #( ( @@@ ) @@@ 6 # #( ( @@@ @@@ #' 4/ 8 #( ( @@@ ! @@@ f;gh,' & g ! "# % ( ( % , ( ( ( @@@ @@@ ! , (%5& 4# / &i# " 0 2 =1 2jb ( 2# 9,8 &: i sd * ) *d ! , & %2g 4 ? 9,' &: " 0 )di 1(1( k s d g $% " s d g ! www.kersemi.com ! ! " -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -6.7a 0.1 1 10 100 4 5 6 7 8 9 10 v = 10v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 175 c j t = 25 c j 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v -4.5v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -4.5v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v -4.5v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -4.5v www.kersemi.com # $ % " &' ( & ( % & % & % ) * & 1 10 100 0 200 400 600 800 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0.1 1 10 100 0.2 0.8 1.4 2.0 2.6 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 0.1 1 10 100 1 10 100 100 0 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 0 5 10 15 20 25 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -4.0 a v = -20v ds v = -50v ds v = -80v ds www.kersemi.com %* & %* & + ," # $ -"", . !/ # $ 1 ! 0.1 % 4 4 l + - v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0.0 2.0 4.0 6.0 8.0 t , case temperature ( c) -i , drain current (a) c d www.kersemi.com ( & 0 ( &+ ," # $ ', - & q g q gs q gd v g charge 1 d.u.t. v d s i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 2 . ,+ ," 2 . , t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v 25 50 75 100 125 150 175 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.7a -2.5a -4.0a www.kersemi.com p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 4 ? /* ( =14 ? ( =1 1'( ee ? l/ (l 3 ( %1 ? % ", 1 ( ( ? + ? % "%5& ( ( 8 2 3 4/ 1 8l8 0 %& 45 333 8 % & (%/ ) // ( %&''' ) 6-7)-% www.kersemi.com lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copac k 1- gate 2- collector 3- emitter 4- collector dimensions are shown in millimeters (inches) example: in the assembly line "c" t his is an irf1010 lot code 1789 as s e mb le d on ww 19, 1997 part numbe r as s e mb l y lot code dat e code year 7 = 1997 line c wee k 19 logo r e ct if ie r int e rnat ional note: "p" in assembly line position indicates "lead-free" www.kersemi.com |
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